SUBSTITUTED AND BRANCHED POLYCHALCONES: SYNTHESES AND CHARACTERIZATION BY SPECTROMETRIC METHODSMALM B.1981; MAKROMOL. CHEM.; ISSN 0025-116X; CHE; DA. 1981; VOL. 182; NO 5; PP. 1307-1317; BIBL. 35 REF.Article

A TECHNICAL APPROACH TO GRINDING WHEEL SELECTIONMALM B.1981; IRON STEEL INT.; GBR; DA. 1981-06; VOL. 54; NO 3; 149-150, 152-154, 156Article

A method suitable for the isolation of monoclonal antibodies from large volumes of serum-containing hybridoma cell culture supernatantsMALM, B.Journal of immunological methods. 1987, Vol 104, Num 1-2, pp 103-109, issn 0022-1759Article

Chemical modification of cys-374 of actin interferes with the formation of the profilactin complexMALM, B.FEBS letters. 1984, Vol 173, Num 2, pp 399-402, issn 0014-5793Article

SUBSTITUTED AND BRANCHED POLYCHALCONES. II: POLYMERIC AND SOLUBILITY PROPERTIES OF THE POLYCHALCONESMALM B; LINDBERG JJ.1981; MAKROMOL. CHEM.; ISSN 0025-116X; CHE; DA. 1981; VOL. 182; NO 10; PP. 2747-2755; BIBL. 24 REF.Article

THE EFFECT OF PROTEOLYSIS ON THE STABILITY OF THE PROFILACTIN COMPLEXMALM B; NYSTROEM LE; LINDBERG U et al.1980; F.E.B.S. LETTERS; NLD; DA. 1980; VOL. 113; NO 2; PP. 241-244; BIBL. 11 REF.Article

A FLEXIBLE ASYNCHRONOUS MICROPROCESSORLAWSON HW JR; MALM B.1973; B.I.T.; DANM.; DA. 1973; VOL. 13; NO 2; PP. 165-176; BIBL. 19 REF.Serial Issue

ROSIN ISOCYANATES FROM AMINES IN THE PRESENCE OF PALLADIUM (II) CHLORIDELINDBERG JJ; MALM B; SUOMI L et al.1980; FINN. CHEM. LETT.; ISSN 0303-4100; FIN; DA. 1980; NO 5; PP. 153-156; BIBL. 10 REF.Article

STUDIES ON SULFOLANE. II. ELECTRO-INITIATED POLYMERIZATION OF VINYL MONOMERSMARTINMAA J; LUOTO M; MALM B et al.1973; SUOMEN KEMISTIL., B; SUOMI; DA. 1973; VOL. 46; NO 3; PP. 83-86; BIBL. 8 REF.Serial Issue

The profilin-actin complex: further characterization of profilin and studies on the stability of the complexMALM, B; LARSSON, H; LINDBERG, U et al.Journal of muscle research and cell motility. 1983, Vol 4, Num 5, pp 569-588, issn 0142-4319Article

Papers Selected from the 5th International SiGe Technology and Devices Meeting (ISTDM 2010)Östling, Mikael; GUNNAR MALM, B; RADAMSON, Henry H et al.Solid-state electronics. 2011, Vol 60, Num 1, issn 0038-1101, 141 p.Conference Proceedings

Nonlinear modelling paves the way to bespoke polymersBULSARI, A; PITKÄNEN, P; MALM, B et al.BP & R. British plastics and rubber. 2002, Num DEC, pp 4-5, issn 0307-6164, 2 p.Article

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gateVON HAARTMAN, Martin; GUNNAR MALM, B; ÖSTLING, Mikael et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 836-843, issn 0018-9383, 8 p.Article

Improvement of the thermal stabilization of polyethylene with lignosulphonateLEVON, K; HUHTALA, J; MALM, B et al.Polymer (Guildford). 1987, Vol 28, Num 5, pp 745-750, issn 0032-3861Article

A 4H-SiC Bipolar Technology for High-Temperature Integrated CircuitsLANNI, L; MALM, B. G; ZETTERLING, C.-M et al.Journal of microelectronics and electronic packaging. 2013, Vol 10, Num 4, pp 155-162, issn 1551-4897, 8 p.Article

Subband structure and effective mass of relaxed and strained Ge (1 1 0) PMOSFETsHSIEH, Bing-Fong; CHANG, Shu-Tong.Solid-state electronics. 2011, Vol 60, Num 1, pp 37-41, issn 0038-1101, 5 p.Conference Paper

Fabrication of high-Ge-fraction strained Si_1―xGe_x/Si hole resonant tunneling diode using low-temperature Si₂H₆ reaction for nanometer-order ultrathin Si barriersTAKAHASHI, Kuniaki; SAKURABA, Masao; MUROTA, Junichi et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 112-115, issn 0038-1101, 4 p.Conference Paper

Double-polysilicon SiGe HBT architecture with lateral base linkFOX, A; HEINEMANN, B; RÜCKER, H et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 93-99, issn 0038-1101, 7 p.Conference Paper

Low-frequency noise in high-k LaLuO₃/TiN MOSFETsOLYAEI, Maryam; GUNNAR MALM, B; HELLSTRÖM, Per-Erik et al.Solid-state electronics. 2012, Vol 78, pp 51-55, issn 0038-1101, 5 p.Conference Paper

Control of strain relaxation behavior of Ge_1―xSn_x buffer layersSHIMURA, Yosuke; TAKEUCHI, Shotaro; NAKATSUKA, Osamu et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 84-88, issn 0038-1101, 5 p.Conference Paper

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al₂O₃ deposition and subsequent post-annealingHAIGUI YANG; IYOTA, Masatoshi; IKEURA, Shogo et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 128-133, issn 0038-1101, 6 p.Conference Paper

The dynamics of the microfilament system and the possible function of profilactinLINDBERG, U; MARKEY, F; SEGURA, M et al.Journal of submicroscopic cytology. 1984, Vol 16, Num 1, pp 173-174, issn 0022-4782Article

Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wellsKASCHEL, M; SCHMID, M; OEHME, M et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 105-111, issn 0038-1101, 7 p.Conference Paper

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivityLIU, Xue-Chao; MYRONOV, M; DOBBIE, A et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 42-45, issn 0038-1101, 4 p.Conference Paper

Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic baseGUNNAR MALM, B; HARALSON, Erik; SUVAR, Erdal et al.IEEE electron device letters. 2005, Vol 26, Num 4, pp 246-248, issn 0741-3106, 3 p.Article